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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO IN Collector-base voltage PARAMETER CONDITIONS Open emitter 2SB857 VCEO Collector-emitter voltage VEBO IC ICP PC Tj Tstg Emitter-base voltage Collector current ANG CH 2SB858 SEM E Open base OND IC TOR UC VALUE -70 -50 -60 -5 -4 -8 UNIT V V Open collector V A A W ae ae Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -45~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB857 IC=-50mA; RBE= 2SB858 V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain IC=-10|I IE=-10|I A; IE=0 A; IC=0 CONDITIONS 2SB857 2SB858 SYMBOL MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -5 -1.0 -1.0 -1 60 35 320 |I V V V V A IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-50V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V C Transition frequency D hFE-1 classifications B 60-120 HAN INC 100-200 160-320 SEM GE OND IC TOR UC 15 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB857 2SB858 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 SEM GE HAN INC OND IC TOR UC 4 |
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